Abstract
We have investigated annealing ambient effects on optical properties of GaInNAs/GaAs single quantum wells with the use of photoluminescence (PL) spectroscopy sensitive to localization of carriers and photoreflectance (PR) spectroscopy sensitive to the intrinsic band-edge transition. We examined two annealing ambient sequences: tertiarybutylarsine and H 2 in the annealing process and H 2 in the cooling process. The PL efficiency at room temperature is markedly improved in the H 2 ambient annealing process. We found from systematic results of PL and PR spectra that the PL efficiency at room temperature is in connection with the Stokes shift at 10 K, which is a measure of carrier localization, and the broadening factor of the band-edge transition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
