Abstract
We report electromagnetic and thermomagnetic transport studies on a magnetic topological insulator thin film Cr0.15(Bi0.1Sb0.9)1.85Te3 grown by molecular beam epitaxy. The temperature and gate voltage dependence of the anomalous Hall effect exhibits the typical behavior of a quantum anomalous Hall insulator. The anomalous Nernst effect (ANE) shows a sign reversal when the Fermi level is tuned across the charge neutrality point of the surface Dirac cone. We show that the ambi-polar behavior of the ANE can be explained by the semiclassical Mott relation, in conjunction with the ambi-polar Dirac band structure.
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