Abstract
We report AlxIn1-xAsySb1-y PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses.
Highlights
Avalanche photodiodes have been widely used in telecommunication, military, and research applications requiring receivers with high optical sensitivity [1]
We report AlxIn1-xAsySb1-y PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability
Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with comparable multiplication layer thicknesses
Summary
Avalanche photodiodes have been widely used in telecommunication, military, and research applications requiring receivers with high optical sensitivity [1]. APDs typically exhibit a proportional relationship between ambient temperature and bias required to maintain a constant gain, M. This is due to a change in impact ionization efficiency with temperature. APDs requiring only simple bias feedback circuits due to minimal values of ΔVbd/ΔT are desirable for such highly sensitive applications. Another factor contributing to ΔVbd/ΔT is the APD multiplication layer thickness. Reported AlxIn1-xAsySb1-y PIN and SACM APDs, which are lattice matched to GaSb, have demonstrated low excess noise, k = 0.01~0.05, and high absorption efficiency covering a wide optical spectrum [6,7,8,9]. In order to further test the robustness of these APDs, temporal stability was measured
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