基于渐变AlxGa1-xN缓冲层的透射式GaN光电阴极

Abstract

We create a GaN photocathode based on graded AlxGa1?xN buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes. A gate-shaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained. Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones. The fitted interface recombination velocity is 5?04 cm/s, with negligible magnitude, proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer.