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Abstract
AlxGa1−xN bulk single crystals have been grown by a solution growth technique in a cubic anvil cell with a solid pressure medium. GaN powder pellets as starting materials serve as a nitrogen source for crystallization in a Ga∕Al alloy. The growth process (up to 3days at T=1750°C, p=30kbar) yields crystals up to 0.6×0.4×0.2mm3 in size. X-ray diffraction investigations confirm the growth of the AlxGa1−xN phase. The crystal composition is studied by mass spectrometry, showing aluminum contents as high as x=27%. The near-band-gap photoluminescence spectra in AlxGa1−xN are blueshifted with respect to GaN and indicate Al concentrations in agreement with results from mass spectrometry and from the measured lattice parameter contraction.
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