Aluminum/lead tetroxide nanothermites for semiconductor bridge applications

Abstract

Renewed interest in exploiting the full potential of nanothermites has been observed, considering that typical nanothermite powders are prone to get agglomerated and react incompletely. Herein, via direct ink writing, the fabrication of nanothermite films and their integration on semiconductor bridges come true simply and efficiently, keeping nanoscale agents spatially uniform and therefore chasing for reinforced output capability. The key ingredients are Al/Pb3O4 nanothermites and such ink formulation features higher particle loading (95 wt%) than that previously reported in the literature. Experimental results show that the maximum output energy of the Al/Pb3O4 nanothermite inks reaches 1960 J g−1, while the average linear burning rate maintains nearly 19.14 cm s−1. Furthermore, the lab-on-a-chip integration of nanothermite films prominently enhances the energy yield of semiconductor bridges (up to 282 mJ). It turns out that Al/Pb3O4 nanothermite inks show great potential for applications on semiconductor bridges due to their remarkable output performance.