Abstract
The etch and corrosion characteristics of stacked aluminum were investigated in a m=0 helicon plasma etcher. Wide process margin was achieved in the aspects of Al etch profile and selectivity of Al to photoresist. The dependence of corrosion resistance on etch parameters was remarkably improved under the conditions of high source power, low pressure, and no N2 addition. The sidewalls of etched Al analyzed by tunneling electron microscopy (TEM) were composed of three different layers: an outermost layer, a middle layer, an innermost layer. When N2 was added, the serious corrosion was caused by the high concentration of residual chlorine captured in the dense sidewall film which mainly consists of Al–O, Al–N, Si–O, and Si–N. It was observed that lowering the source power induced the big increase of both Cl and Cu concentrations.
Published Version
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