Abstract
Thin films of transparent conducting aluminum-doped ZnO (ZnO:Al) have been deposited by ion beam sputtering. The dependence of electrical and optical characteristics upon aluminum content in the films and upon post deposition annealing has been examined. Films have been produced with resistivities of 1 ×10 -3Ω cm and absorption coefficients of 3100 cm -1 in the visible region. By annealing at temperatures of 350–500° C, the achieved resistivities and absorption coefficients are (5×6x)10 -4Ω cm and 1500-1000 cm -1, respectively.
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