Abstract
ABSTRACTAluminum thin films were deposited by chemical vapor deposition on SiO2 substrates using trimethylamine alane (TMAA) in a standard low pressure CVD reactor system, with argon as a carrier gas. Film quality and morphology were found to be a sensitive function of reactor flow dynamics. High purity films were obtained with resistivities of ∼5.0 μΩ-cm and grain sizes of 1–2 μm in diameter, but many of these films also exhibited aluminum whiskers, which caused VLSI processing problems. The CVD aluminum films exhibited conformal deposition over 0.5μm topographies, and also demonstrated electromigration lifetimes comparable to those of sputtered aluminum films. Aluminum films deposited using TMAA were also found to be selective at 90°C for titanium oxide.
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