Abstract
For integrated circuit fabrication on 300 mm wafers, copper interconnections cleaning is generally done with single wafer tools. In this study, we focused on the cleaning of aluminum interconnections, on single wafer tool, with a cheap and easy to use chemistry. Aluminum compatibility with diluted HF solutions was first evaluated, then short and efficient cleaning processes were developped for two kind of applications : cleaning after aluminum line etching and cleaning after final dielectric etching over the aluminum pad. It was demonstrated that cleaning efficiency was poor for the shorter process time (20 s), but improved with process time increase, highlighting a lift-off mechanism for polymers removal. Best process was achieved with 40 s of HF 0.2%, that offers a good compromise between polymer removal and lateral recess of the aluminum.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
