Abstract
We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~20nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide (AlOx) was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The breakdown voltages of the bi-layer gate dielectrics vary between 5 and 12V and the electrical breakdown field is at least 5MV/cm for all AlOx preparation conditions.
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