Abstract
Thin polycrystalline silicon (poly-Si) layers can be formed by aluminium-induced crystallisation of amorphous silicon (a-Si). During annealing the initial glass/Al/a-Si layer structure is transformed into a glass/poly-Si/Al+Si structure. For the overall process the structure of the Al layer is very important. In this paper the effect of oxygen present during deposition of the Al-layer on process time and grain size is discussed. It was found that low oxygen flows ( f O 2 =1 sccm) during Al depositions cause a significant reduction in process time. However, the grain size of the resulting poly-Si films is not affected. Further increase of f O 2 does not result in further acceleration of the process. Instead of that the layer exchange becomes more and more incomplete and the resulting poly-Si films are discontinuous. Because of the considerable reduction in process time for samples with Al-layers deposited at f O 2 =1 sccm the annealing temperature could be lowered from 500 to 460 °C in order to obtain larger grains. The process was still completed within 90 min.
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