Abstract
The effect of an evaporated thick aluminium paper on electrical properties of multicrystalline and gold contaminated FZ monocrystalline silicon wafers was investigated. By means of minority carrier diffusion length measurements and Deep Level Transient Spectroscopy, it was deduced that the material improvements observed after annealing at 900 °C are due to gettering of metallic impurities in the Al-Si alloyed layer.
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