Alumina tunnel contact based lateral spin-Field effect transistor

Abstract

In the present work, modified Datta and Das Type silicon based lateral spin-Field Effect Transistor (MDD Type s-FET) is presented with alumina as tunnel contact. The insertion of alumina enhances the spin injection ability of Co-Graphene nanosheets based ferromagnetic electrode (FM) and also resolves the conductivity mismatch problem. The main accomplishment of present work is that fabricated MDD Type s-FET with alumina as tunnel contact exhibits the non-rectifying current–voltage characteristic with sufficiently large value of MR which is an indispensable requirement of spintronics devices. Also, in present work 2-dimensional electron gas was used as a channel which can control MR through gate voltage. Similarly, the control on MR through gate voltage enables the switching action in s-FET.