Abstract
Relaxation of compressed InP and InGaAs at different strains and temperatures is examined in this study. For example, different compressive strain states of InP can be attained by depositing InP on an InxGa1−xAs graded buffer with different compositions, x. In slightly strained elemental and compound semiconductor films, including InP and InGaAs, relaxation occurs via the primary-slip system, a∕2⟨110⟩{111}, where glide takes place on {111}-type planes. At high lattice mismatches, Lomer edge dislocations are the predominant form of relaxation. In this work at intermediate lattice-mismatch strains, relaxation occurred via the secondary, a∕2⟨110⟩{110}, slip system in InP and InGaAs. For these strains above a critical strain of about 0.0085, both the primary- and secondary-slip systems are active evident by cross slip between these two slip systems. The extent of relaxation via the primary- or secondary-slip system was found to be dependant on growth temperature. Relaxation via the secondary-slip system, when it was active, increased as the temperature decreased and we found a 1.5 eV difference between the activation energy for glide via the primary- and secondary-slip systems.
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