Abstract
Requirements on precursors are formulated and approaches to determine the suitability of new group III and group V source materials discussed. Among these, study of the shape and the position of the Arrhenius plot of the growth rate is prior importance to determine the potential of source material combinations for uniform deposition of high purity films. The advanced quality of the materials grown from coordinatively saturated precursors will be shown. As a replacement for the group V hydride bulk sources, in situ generation of such compounds is addressed.
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