Abstract
In this study specific contact resistance ( r c), Auger electron spectroscopy and morphology results are reported for Au/Pt/Ti, Au/Ni/Ti and Au/Ru/Ti ohmic contact systems to n-InP. These contacts were fabricated on Ar + sputtered and chemically etched InP surfaces. Irrespective of the pre-metallization treatment, minimum r c values of 1×10 −5 Ω·cm 2 were obtained afte annealing at 450°C. It was found that the Ar + sputtering step is unnecessary in the processing of ohmic contacts to InP. The Au/Ru/Ti contact combination revealed the best surface morphology after annealing, although the morphologies of all three systems were excellent in comparison with the Au/Ni/Au-Ge contact scheme.
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