Alternative Approaches to Program Memristor and Reduce the Effect of Random Telegraphic Noise

Abstract

Memristance gets varied with frequency and duration of write voltage, therefore, multi-bit data was programmed into a memristor through frequency and time based modulation. Three novel memristive programming techniques such as multiple time single frequency keying (MTSFK), single time multiple frequency keying (STMFK) and multiple time multiple frequency keying (MTMFK) were proposed, which enhance the degree of freedom in memristive circuit design. Further, a memristor based frequency shift keying (FSK) demodulator was implemented, which exhibited lower circuit complexity and reduced on-chip area. The effect of the most significant random telegraph noise was observed during the recording of high resistance state measurements and its effect was mitigated through utilizing a simple current mirror approach. The proposed approaches open up a new path for developing memristor based futuristic circuits in the area of electronics and communication, which would offer lower power consumption, on-chip area and latency.