Abstract
Alternating-current white thin-film light-emitting diodes (ACW-TFLEDs) have been fabricated and demonstrated with composition-graded hydrogenated intrinsic amorphous silicon carbide (i-a-SiC : H) layers. It was found that H2-plasma treatment of luminescent i-a-C : H layer played an important role in decreasing the ACW-TFLED electroluminescence (EL) threshold voltage, increasing the brightness, and broadening the EL spectrum. The EL spectra of the ACW-TFLED under either dc forward or reverse bias, or the sinusoidal alternating-current voltage were qualitatively very similar, with a peak wavelength at about 505 nm and a broad full-width at half maximum (FWHM) about 240 nm. This device revealed a brightness about 800(500)cd/m2 under dc forward (reverse) bias at an injection current density of 600 mA/cm2
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