Alternately double‐sided growth of low‐curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy

Abstract

GaN layers have been grown on double‐side‐polished sapphire substrates using hydride vapor phase epitaxy. The GaN layers on each side of the substrate were alternately grown using a new susceptor with a rotating mechanism. Although a conventional GaN layer grown on one side of a sapphire substrate exhibits a small radius of curvature, the alternately double‐sided‐grown GaN template exhibits a large radius of curvature. The radius of curvature of the alternately double‐sided‐grown GaN template with a thickness of 180 μm was found to be approximately 16.4 m, and was larger than the 0.5 m radius of curvature of the conventional GaN template.