Al/sub 0.22/Ga/sub 0.78/As/Si monolithic two-terminal tandem solar cell grown by MOCVD

M Umeno,Y Azuma,T Jimbo,T Soga,T Egawa

doi:10.1109/pvsc.1993.346998

Al/sub 0.22/Ga/sub 0.78/As/Si monolithic two-terminal tandem solar cell grown by MOCVD

M Umeno, Y Azuma + Show 3 more

https://doi.org/10.1109/pvsc.1993.346998

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Publication Date: May 10, 1993

Affiliation: Nagoya Institute of Technology

#Tandem Cell #Metalorganic Chemical Vapor Deposition + Show 8 more

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Abstract

Multijunction solar cells have been developed for fabricating high efficiency solar cells. These tandem cells immediately have potentials for achieving conversion efficiencies over 30%. In this paper, the authors report an Al/sub 0.22/Ga/sub 0.78/As/Si tandem solar cell, for which an active area efficiency of 15.7% have been achieved in a 2-terminal and 17.1% in a 4-terminal under AM1.5, 1 Sun at 27/spl deg/C. The Al/sub 0.22/Ga/sub 0.78/As top cell on Si was grown by metalorganic chemical vapor deposition (MOCVD). The short-circuit current density, open-circuit voltage and fill factor are 13.5 (mA/cm/sup 2/), 1.56 (V) and 74.7 (%) for the tandem cell, respectively. >

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