Abstract
A diamond Schottky alpha-voltaic nuclear battery (DSAB) is fabricated, and the alpha-particle degradation test is performed. The device is formed on oxygen-terminated intrinsic CVD diamond epitaxially grown on B-doped HPHT diamond. An open-circuit voltage of 1.13 V and a short-circuit current of 53.4 pA are measured under a low-activity alpha source with 8.85 μCi/cm2 irradiation, and a total conversion efficiency of 0.83% is obtained. The DSAB simultaneously has better open-circuit voltage and short-circuit current stability than Si and SiC diodes, which means that DSAB has the highest potential for achieving high and stable conversion efficiency.
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