Abstract
We successfully fabricated the high-quality few-layered α-In2Se3 and investigated its carrier dynamics and nonlinear optical absorption properties by pump-probe and open-aperture Z-scan technologies. Intra- and inter-band relaxation times were determined to be 7.2ps and 270ps, respectively, and the effective nonlinear absorption coefficient was measured as βeff=-3.9×103 cm/GW (1064nm). Based on α-In2Se3 saturable absorber, a continuous-wave mode-locking operation was realized. Pulse duration, repetition rate, and maximum output power were measured to be 352fs, 42.4MHz, and 0.56W, corresponding to pulse energy of 13.2nJ and peak power of 37.5kW. To the best of our knowledge, this is the first demonstration of non-transition metal chalcogenides applied in ultrafast all-solid-state bulk lasers. This work well verified that α-In2Se3 should be a promising optical modulator candidate for all-solid-state lasers.
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