Abstract
AbstractSoft errors of the bipolar RAM (Random Access Memory) caused by α particles emitted from the radioactive material in the package are investigated. The in‐system test and the particle irradiation test were performed by using a 1 Kbit RAM made especially for this purpose. The relation between the soft error rate and the amount of the α particle irradiation was examined. It was confirmed that even in the static bipolar RAM, soft errors do occur due to α particles from the package. The relation between the soft error rate, memory cell structure and the design condition was discussed. Furthermore, the mechanism of soft errors was investigated and the soft error rate was estimated by considering the effective noise change due to α particles and the charge required to invert data in the flip‐flop cell. These results were compared with the experiment.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
