Abstract
The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to −1.56 × 1012 cm−2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.
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