Al₂O₃-Based a-IGZO Schottky Diodes for Temperature Sensing.

Wendong Zhang,Tianhao Zhou,Qiulin Tan,Jijun Xiong,Fei Lu,Qianqian Guo

doi:10.3390/s19020224

Abstract

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.

Highlights

A harsh environment usually involves factors such as extreme temperature, high pressure, and high shock
3.1. amorphous indium-gallium-zinc-oxide (a-IGZO) Schottky Diodes on Al2 O3 Ceramics
The J–V characteristics of the a-IGZO Schottky diodes on Al2 O3 ceramics with different

Summary

Introduction

A harsh environment usually involves factors such as extreme temperature, high pressure, and high shock. High-temperature electronics and sensors that can operate between 21 ◦ C and 400 ◦ C have drawn considerable attention owing to their wide applications in harsh environments. Integrated sensing modules that can operate at high temperatures will be beneficial for many industrial applications. A high-temperature integrated circuit is an important part of such systems, so it must comprise diodes and transistors that can operate at high temperatures. The simplest device that can be integrated with a circuit is based on semiconductor diodes [1]. It has already been proved that the application of some wide-bandgap semiconductor materials overcome the defects of silicon materials, making semiconductor devices capable of operating at temperatures above 300 ◦ C [2]. Shao et al [3] prepared a 4H-SiC-based P-N junction diode using

Methods

Results

Conclusion