Abstract
AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs.
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