Abstract
Aluminum nitride ( AlN ) films were prepared successfully on sapphire and nitrided sapphire substrates by reactive DC magnetron sputtering. The effect of nitridation of sapphire substrate on the growth of AlN films was studied. The films were characterized by X-ray diffraction ( XRD ) , atomic force microscopy ( AFM ) and optical ab- sorption spectrum. XRD patterns of AlN films exhibited a strong preferential c -axis orientation , and nitridation of sap- phire substrate could improve the crystal quality of AlN films and also decrease the residual stress of films. But AFM results revealed that the grain size distribution of films deposited on nitrided sapphire substrates was not more homoge- nous than that of films deposited on sapphire substrates , and optical absorption results also showed nitridation of sap- phire substrate nearly had no effect on the optical behavior of AlN films.
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