AlN thin films grown by ion-beam-enhanced deposition and its application to SOI materials

Abstract

Large area aluminium nitride (AlN) films were synthesized by ion-beam-enhanced deposition (IBED) method. Characterizations of the films revealed that the quality of the films strongly depends on the evaporation rate of Al. The best quality was obtained with the evaporation rate of Al at 0.5 Å/s, and the film has excellent dielectric property and a smoother surface with roughness RMS values of 0.13 nm, and could be bonded directly with a hydrogen-implanted wafer at room temperature. Consequently, a novel silicon-on-insulator structure with AlN as insulating layer has been formed by the Smart-Cut process.