Abstract
A new vapor phase crystal growth technique was applied to fabricate single crystal AlN wafers up to 1.75-inch diameter. The wafers were sliced from AlN crystals and polished. Fabricated AlN wafers were investigated by X-ray diffraction, TEM, and cathodoluminescence. X-ray diffraction and TEM studies confirmed single crystal structure of grown material. High electrical resistivity of these AlN wafers was verified. AlN homoepitaxial layers exhibiting sharp near-band-edge emission were grown on fabricated AlN substrates. These results open the door for the commercialization of AlN substrates for advanced high-power mm-wave devices and optoelectronic devices based on Group III-nitride semiconductors. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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