Abstract
The creation of microelectromechanical systems (MEMS) that can operate through elevated temperatures would enable systems diagnostics and controls that are not possible with conventional-off-the-shelf components. The integration of silicon carbide (SiC) with aluminum nitride (AlN) has led to the fabrication of devices that can withstand elevated temperature anneals >935 °C. The results from a piezoelectric micromachined ultrasonic transducer (PMUT) and a microresonator are reported as demonstrations of the fabrication process. Testing the PMUT response before and after annealing at 935 °C led to a change in resonant frequency of less than 1%, which is attributable to a shift in film stress. The response of the microresonator was RF tested $in~ situ$ up to 500 °C and showed no degradation in its electromechanical coupling coefficient. The resonant frequency decreased with temperature due to the temperature coefficient of Young’s modulus, and the quality factor decreased with temperature and remained unrecoverable upon cooling. The degradation in the quality factor is suspected to be a result of oxidation of the titatium nitride (TiN) top electrode, which increases the resistivity and leads to an unrecoverable reduction in the quality factor. The robust piezoelectric response of AlN at these temperatures show that AlN is a very promising candidate for elevated temperature applications. [2019-0019]
Submitted Version
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
