Abstract
For the first time, we introduce an effective passivation technique for ultra-thin AlGaN barrier metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs). Three different ultra-thin barrier structures were carried out to be compared for the device characteristics. The MOCVD-ALN passivated device demonstrated a high maximum drain current of 1002 mA/mm, low on-state resistance of 7.2 Ω.mm, and low current degradation, showing great potential for future power device applications.
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