Abstract
Surface passivation effect with an aluminum nitride (AlN) thin film deposited by atomic layer deposition (ALD) on metal/gallium nitride (GaN) junctions were investigated using current–voltage and capacitance–voltage (CV) measurements. The sample with an AlN layer revealed higher barrier height and lower ideality factor compared to the sample without AlN layer. X-ray photoelectron spectroscopy measurement on bare GaN surface showed the presence of native oxide on the GaN surface. From CV measurements, it was found that the interface state density was reduced with an AlN layer. Hence, deposition of AlN layer by ALD can be used to improve the interface quality of metal/GaN junction.
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