Abstract
AbstractWe report on an improvement of structural and morphological quality of AlN/GaN superlattices when the multiple superlattice (MSL) structure is used. Such a structure contains strained AlN/GaN simple superlattices with a small number of periods separated by thick GaN layer. Hot wall epitaxy technique (HWE) was used to grow these structures and atomic force microscopy (AFM) as well as X‐ray diffraction measurements were used to obtain the information about their structural and morphological properties. According to AFM measurements, the threading dislocation density and the surface roughness were decreased compare to the simple superlattice. Xray rocking curve (XRC) measurements exhibit narrower peaks, so the full width at half maximum (FWHM) of the 0th superlattice peak was decreased by 37%. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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