Abstract
AbstractSingle‐crystalline AlN thin films were epitaxially deposited on GaN/sapphire at a low temperature of 300 °C using a helicon sputtering system. The crystallinity of the AlN films and the in‐plane axes relation between the films and substrates were characterized by X‐ray rocking curve and phi‐scan measurements. The two‐dimensional electron gases induced at the AlN/GaN heterojunction were investigated and a sheet carrier concentration up to 1.24 × 1013 cm–2 was observed by Hall effect measurement. The results justify the attraction of this low temperature grown AlN/GaN heterostructure for use in high‐power, high‐speed and high‐temperature electronics. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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