AlN formation by an Al/GaN substitution reaction

Marsetio Noorprajuda,Hiroyuki Fukuyama,Makoto Ohtsuka,Masayoshi Adachi

doi:10.1038/s41598-020-69992-y

Marsetio Noorprajuda, Hiroyuki Fukuyama + Show 2 more

Open Access

https://doi.org/10.1038/s41598-020-69992-y

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Journal: Scientific Reports	Publication Date: Aug 3, 2020
Citations: 4	License type: open-access

Affiliation: Tohoku University

Abstract

Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel AlN fabrication technique by using the Al/GaN substitution reaction method. The substitution method we propose here consists of an Al deposition process on a GaN substrate by a sputtering technique and heat treatment process. The substitution reaction (Al + GaN = AlN + Ga) is proceeded by heat treatment of the Al/GaN sample, which provides a low temperature, simple and easy process. C-axis-oriented AlN layers are formed at the Al/GaN interface after heat treatment of the Al/GaN samples at some conditions of 1473–1573 K for 0–3 h. A longer holding time leads to an increase in the thickness of the AlN layer. The growth rate of the AlN layer is controlled by the interdiffusion in the AlN layer.

Highlights

Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, highfrequency electronic and optoelectronic devices
To determine a novel technique for growing AlN to increase the possibility of further developments, here, we introduce an Al layer deposited on GaN (Al/GaN) substitution reaction method
This paper focuses on the investigation of AlN fabrication by the substitution method at relatively low temperatures

Summary

Introduction

Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, highfrequency electronic and optoelectronic devices. The A l2O gas is transported to the growth zone to react with nitrogen gas at 2023 K on a sintered AlN plate for 30 h, which yields a rod-like AlN crystal (48-mm long) The advantages of this method are an economically friendly α-Al2O3 source and good crystalline quality of AlN. Wu et al.[21] used metallic Al and nitrogen gas as source materials to grow an AlN crystal, which they called elementary-source vapour-phase epitaxy (EVPE) They grew the AlN with a growth rate of 18 μm/h under an optimum growth zone temperature of 1823 K. HVPE technique requires high-quality PVT-AlN substrates to obtain a low threading dislocation density It seems that no further developments can be made in the common AlN fabrication technologies. AlN was not o btained[33]

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