Abstract
GaN/AlN core-shell nanowires (NWs) were synthesized by a Chemical Vapor Deposition (CVD) through two steps method. GaN core nanowire and AlN shell of each core-shell nanowire are uniform and wurtzite hexagonal single crystal structure. The AlN shell epitaxial grow on GaN core nanowire based on gas-solid (VS) mechanism, and they all grow in [001] direction. The PL property of the GaN/AlN core-shell nanowires shows promising application in ultraviolet photoelectric devices.
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