Abstract
AbstractIn this study, we report the growth of aluminum nitride (AlN) bulk single crystals by the sublimation method. The crystals were grown in a newly designed TaC crucible. The crucible has a TaC guard ring around the seed crystal to protect against polycrystal deposition around the seed crystal during the initial growth stage. The ring enhances lateral enlargement growth because it protects against the polycrystal deposition. The (0001) oriented AlN crystals were grown on (0001) SiC and (0001) AlN seed crystals. The largest grown crystal was 43 mm in diameter. The best quality area on the grown AlN crystal had the lowest etch pit density of 1 × 10‐4cm‐2. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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