Abstract
Despite considerable research in thin-film growth of wide-bandgap group III nitride semiconductors, substrate technology remains a critical issue for the improvement of nitride devices. With applications ranging from high-power electronics to optoelectronics, an increasing number of nitride semiconductor devices are becoming commercially available. Currently, many of these devices are being grown heteroepitaxially on nonnative substrates, leading to a high defect density in the active layers, which limits device performance and lifetime. Aluminum nitride (AlN) is considered a highly desirable candidate as a native substrate material for III-nitride epitaxy, especially for AlGaN devices with high Al concentrations. AlN crystals have been grown by a variety of methods. High-temperature growth of AlN bulk crystals by physical vapor transport (PVT) has emerged as the most promising growth technique to date for production of large, high-quality single crystals. This chapter reviews recent growth and characterization results of AlN bulk crystals grown by PVT and discusses several issues that remain to be addressed for continued development of this technology.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
