Abstract
We demonstrate four-terminal GeTe-based RF switches with independent thermal actuation (switching). These devices incorporate an AlN-based dielectric separating high-conductivity W micro-heaters from the RF signal path. With dc, pulsed, and RF testing, we show that an AlN barrier decreases the switch parasitic capacitance with minimal increases in the switching power. Decoupling these design variables, with the high thermal conductivity of the AlN, makes it possible to increase the electrical separation with a thicker AlN film for lower parasitic capacitance with minimal decrease in desirable thermal coupling. Increasing the AlN thickness from 105 to 170 nm results in switches with an improvement in cutoff frequency, $f_{\mathrm {CO}}$ from 5.3 to 8 THz, a $C_{\mathrm{\scriptscriptstyle OFF}}$ improvement from 15 to 10 fF, while maintaining the $R_{\mathrm{\scriptscriptstyle ON}}$ at 2 $\Omega $ . This improvement was accompanied by normalized minimum power to amorphize increases of only 14% (from 1.5 to 1.7 W) for a 100-ns heater pulse.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.