Abstract
[(AlN) 1/(GaN) n1 ] m /(AlN) n2 -based quantum wells (QWs) constructed by periodically introducing several atomic layers of AlN into (AlN) 1/(GaN) n1 short-period superlattices have a great potential for the application to mid-infrared quantum-cascade lasers. Effective electron injection from the first to second subbands in the (AlN) 1/(GaN) n1 short-period superlattice is expected through the inserted (AlN) n2 layer which has a large polarization field. The [(AlN) 1/(GaN) n1 ] m /(AlN) n2 QWs were prepared by hot wall epitaxy, and the structure was characterized by transmission electron microscopy and X-ray diffraction. The quality of [(AlN) 1/(GaN) n1 ] m /(AlN) n2 QW depends significantly on the quality of GaN buffer layer, and high-quality QW structures were prepared on GaN films grown on Al 2O 3 ( 0 0 0 1 ).
Published Version
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