Alloying (In,Mn)As and (Ga,Mn)As: ferromagnetic (In,Ga,Mn)As lattice-matched to InP

Abstract

An effect of alloying two ferromagnetic semiconductors (In,Mn)As and (Ga,Mn)As on the ferromagnetic properties of resultant (In,Ga,Mn)As alloys is reported. For conditions close to lattice-matching to InP substrates, y = 0.53 in (In y Ga 1-y ) 1-x Mn x As, ferromagnetism up to Curie temperatures T C = 100-110K could be achieved for a Mn composition x = 0.13. Trends in the Curie temperature in (In,Ga,Mn)As are compared with (Ga,Mn)As and (In,Mn)As as a function of Mn content. Hole concentrations determined from magnetotransport, taking into account the anomalous Hall contribution to Hall resistance, gives p/Mn = ∼0.03 ratio to Mn composition in metallic case for x = 0.13. We mention the possible role of chemical ordering (short range) of Mn impurity atoms on hole concentration and, consequently, for the ferromagnetic properties.