Alloying effects on the electronic structure of a-Si 1−xN x:H films prepared by a mercury-photosensitized decomposition method

Abstract

An XPS study of the Si 2p and N1s core levels and of the valence band of a-SiN x:H samples prepared by 254 nm Hg photo CVD is presented. From the Si 2p study, various SiN x configurations are evidenced, the SiN 4 unit being predominant for x⪆1 . The N1s core level modifications are interpreted in terms of H nNSi m configurations. At the top of the valence band, the Si 3p states from SiSi bonds are progressively replaced by N 2p states due to SiN bonds.