Abstract
We have introduced S donors into SiGe alloys as probe atoms for a spectroscopic investigation of the local environment of these donors. Even for low Ge content ( x=2.4%), we already observe strongly broadened lines for the intra-centre transitions, whereas the onset of the photo-ionisation stays at approximately the same energy, in contrast to expectations from a linear extrapolation of the impurity level from values of the pure compounds or from deformation potentials. We thus conclude that the S centres seen are located in the neighbourhood of significantly lower Ge content suggesting that Ge clusters may exist with much higher Ge content which, however, cannot be resolved in the photo-conductivity spectra. This finding, together with the observed line broadening demonstrates strong, non-statistical fluctuations in the alloy distribution.
Published Version
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