Abstract
Doping is a useful parameter for modifying the physical and chemical characteristics of SnS. The facile synthesis of pristine and indium (In) doped tin sulfide (SnS) is done using a hydrothermal process. Indium doping plays an important role to modify the crystalline size in the range of 52–44 nm. The optical band gap was modified in the range of 1.42 to 1.19 eV. The XPS study suggests the red-shift in binding energy which confirms the p-type doping of In in SnS. The performance of SnS-based photodetectors was enhanced by In doping. For 7% In doped SnS, the highest responsivity and detectivity were achieved about 85.0 AW-1 and 8.96 × 1010 Jones, respectively at -1V bias under illumination intensity of 6.96mw/m2. This research establishes an effective way of In doping to improve the photodetector properties of SnS photodetectors, demonstrating that In-doped SnS has a wide range of potential in optoelectronics.
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