Abstract
The inhomogeneous broadening of the near-gap emission (bound excitons (BE) and conduction-band to acceptor (CA)) in semiconductor alloys is reanalysed using the Markoff statistical theory for fluctuations of alloy composition. The authors give the exact relationship between the linewidth and the Bohr radius of the bound particle. The results of their theory indicate that even in the best GaAlAs samples there is still a significant contribution from other broadening mechanisms. They also show that the linewidth ratio of the CA to BE emission lines may provide a good estimate of the natural band offset in the alloy.
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