Abstract
We investigate the MOCVD growth characteristic of the In0.47Ga0.53As layers lattice matched to InP using TMAs as an alternative source of arsine. Improvement of the InGaAs quality was studied by means of PL lines, the origin of photoluminescence (PL), atomic force microscopy. Low temperature PL spectra exhibit a broad this broadening was analyzed using quantitative models for the linewidth of band exciton based on compositional fluctuations within the crystal volume. This statistical fluctuation of the composition affects not only the PL line width but also structural properties of the InGaAs epilayer. Furthermore, by increasing V/III ratio, a degradation of the InGaAs optical and structural quality was observed.
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