Abstract
Abstract The alloy and lattice disorder as well as the annealing behaviour of 0.5 μ m thick Al x Ga 1 - x N films on sapphire substrate after implantation of 181Hf(181Ta) was studied using the perturbed angular correlation (PAC) technique. Al x Ga 1 - x N samples with different molar fractions of AlN were implanted with a fluence of 1 × 10 13 at / cm 2 of the radioisotope 181Hf with an energy of 160 keV at the Bonn Isotope Separator. Subsequently the samples were annealed in a rapid thermal annealing apparatus at temperatures up to 1100 ∘ C in nitrogen atmosphere. The strength of the electric field gradient, which is caused by the wurtzite structure of the host lattice at the probe site, varies linearly with the concentration x of aluminium in the ternary compound. The uniformity of this hyperfine interaction has its minimum at x ≈ 0.6 .
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