Abstract
Allotaxy is a special method to grow epitaxial heterostructures. An important role in this process is the distribution of the crystallites of the compound AB X in the matrix A. This study concerns the first step of allotaxy in the Ni–Si system, that is, the preparation of the precipitate distribution. To investigate the influence of the deposition conditions on the growth and arrangement of the precipitates the substrate temperature as well as the deposition rate have been varied. RBS measurements revealed the redistribution of the deposited Ni already during the deposition process resulting in precipitate coarsening. This effect increases with increasing substrate temperature and decreasing deposition rate. A strong diffusion of Ni atoms towards the sample surface has been observed. The TEM analysis shows that oriented cubic NiSi 2 is grown. Under appropriate deposition conditions self-assembling of the NiSi 2 precipitates has been observed.
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