Abstract

All-inorganic CsPbI3 perovskites have great potential in tandem cells in combination with other photovoltaic devices. However, CsPbI3 perovskite solar cells (PSCs) still face a huge challenge, resulting in a low power conversion efficiency (PCE) relative to organic-inorganic PSCs. In this work, we introduced tetrabutylammonium acetate (TBAAc) as a buffer layer between the SnO2 electron-transport layer (ETL) and CsPbI3 all-inorganic perovskite film interface for the first time. TBAAc not only improved the conductivity of SnO2 ETL but also formed a 1D TBAPbI3 layer between the SnO2 ETL and the 3D CsPbI3 all-inorganic perovskite film, thereby enhancing the stability and passivating the surface defects of the CsPbI3 perovskite to fabricate high-efficiency carbon-counter electrode (CE)-based CsPbI3 solar cells. We fabricated carbon-CE-based hole-transporting layer ( HTL)-free PSCs with an FTO/SnO2/TBAAc/CsPbI3/C structure. The open-circuit voltage (Voc), short circuit current density (Jsc), PCE, and fill factor of the champion CsPbI3 PSCs simultaneously enhanced to 1.08 V, 17.48 mA/cm2, 12.79, and 67.8%, respectively. This PCE is currently one of the high efficiencies reported for the above planar-structured carbon-CE-based CsPbI3 PSCs to date. Moreover, the optimized device exhibits excellent stability, which retained over 83% of its initial PCE after 350 h. This work provides a facile way of simultaneous optimization of the SnO2 ETL and the CsPbI3 perovskite layer to fabricate stable and high-efficiency carbon-CE-based CsPbI3 PSCs.

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